December 21st, 2021 
Daniela Lopez de Luise 
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IEEE AR EDS/SSCS – wEBINAR: “Dielectric breakdown in thin dielectrics. From silicon dioxide to layered dielectrics”
The IEEE Joint Chapter EDS/SSCS of the Argentina Section invites you to the webinar “Dielectric breakdown in thin dielectrics. From silicon dioxide to layered dielectrics”.
It will be delivered by the IEEE EDS Distinguished Lecturer Dr. Félix Palumbo, and will take place on Monday, December 27, 2021, starting at 17:30 AR (GMT-3).
Abstract
Thin dielectrics are the fundamental stone over which the semiconductor industry experienced its huge development. As the key element for manufacturing Metal Oxide Semiconductor Field Effect Transistors, guaranteeing the reliability of gate oxides has become more challenging with the pushing demands of the markets for improved performance in electronic devices. In this framework, understanding not only the statistics but the physical phenomena behind dielectric breakdown is crucial to ensure the reliability of modern and future electronic devices. In this lecture, the fundamentals of thin dielectric breakdown and the state of the art of breakdown studies on novel materials are summarized, focusing on the physical phenomena that characterize thin-film dielectric breakdown and the perspectives on novel 2D materials, that demonstrate a remarkable potential to be applied as gate insulators in future nano-electronic devices.
Thin dielectrics are the fundamental stone over which the semiconductor industry experienced its huge development. As the key element for manufacturing Metal Oxide Semiconductor Field Effect Transistors, guaranteeing the reliability of gate oxides has become more challenging with the pushing demands of the markets for improved performance in electronic devices. In this framework, understanding not only the statistics but the physical phenomena behind dielectric breakdown is crucial to ensure the reliability of modern and future electronic devices. In this lecture, the fundamentals of thin dielectric breakdown and the state of the art of breakdown studies on novel materials are summarized, focusing on the physical phenomena that characterize thin-film dielectric breakdown and the perspectives on novel 2D materials, that demonstrate a remarkable potential to be applied as gate insulators in future nano-electronic devices.
Speaker: Dr. Félix Palumbo
Félix Palumbo (Member, IEEE) received the M.Sc. and Ph.D. degrees in physics from the University of Buenos Aires, Argentina, in 2000 and 2005, respectively. He is currently an Active Researcher in the field of semiconductor device physics and reliability, with experience in the academy and industry.
Date and time
Monday, December 27, 2021, starting at 17:30 AR (GMT-3).
The webinar will be delivered in English.
Access data to the webinar will be sent by email to registrants on the day of the event.
Registration
No admission charge.
Advanced registration is requested, through
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